Low-temperature solution-processed high-capacitance AlOx dielectrics for low-voltage carbon-based transistors
Low-temperature processing of high-capacitance metal oxide-based dielectrics by solution-based methods and their application in developing low-voltage carbon-based transistors may enable next-generation low-cost, power-efficient, flexible and transparent electronics. In this work, a high-capacitance...
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| Main Authors: | , , , , , , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
2 September 2022
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| In: |
Organic electronics
Year: 2022, Volume: 110, Pages: 1-9 |
| DOI: | 10.1016/j.orgel.2022.106636 |
| Online Access: | Resolving-System, lizenzpflichtig, Volltext: https://doi.org/10.1016/j.orgel.2022.106636 Verlag, lizenzpflichtig, Volltext: https://www.sciencedirect.com/science/article/pii/S1566119922002087 
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| Author Notes: | Ashwini Kumar, Andrea Perinot, Sudipta Kumar Sarkar, Dipti Gupta, Nicolas F. Zorn, Jana Zaumseil, Mario Caironi |
| Summary: | Low-temperature processing of high-capacitance metal oxide-based dielectrics by solution-based methods and their application in developing low-voltage carbon-based transistors may enable next-generation low-cost, power-efficient, flexible and transparent electronics. In this work, a high-capacitance AlOx film was developed at a relatively low annealing temperature of ⁓200 °C from its spin-coated precursor solution. |
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| Item Description: | Im Titel erscheint in der chemischen Formel das x tiefgestellt Gesehen am 29.11.2022 |
| Physical Description: | Online Resource |
| DOI: | 10.1016/j.orgel.2022.106636 |