Low-temperature solution-processed high-capacitance AlOx dielectrics for low-voltage carbon-based transistors
Low-temperature processing of high-capacitance metal oxide-based dielectrics by solution-based methods and their application in developing low-voltage carbon-based transistors may enable next-generation low-cost, power-efficient, flexible and transparent electronics. In this work, a high-capacitance...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
2 September 2022
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| In: |
Organic electronics
Year: 2022, Jahrgang: 110, Pages: 1-9 |
| DOI: | 10.1016/j.orgel.2022.106636 |
| Online-Zugang: | Resolving-System, lizenzpflichtig, Volltext: https://doi.org/10.1016/j.orgel.2022.106636 Verlag, lizenzpflichtig, Volltext: https://www.sciencedirect.com/science/article/pii/S1566119922002087 
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| Verfasserangaben: | Ashwini Kumar, Andrea Perinot, Sudipta Kumar Sarkar, Dipti Gupta, Nicolas F. Zorn, Jana Zaumseil, Mario Caironi |
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| 520 | |a Low-temperature processing of high-capacitance metal oxide-based dielectrics by solution-based methods and their application in developing low-voltage carbon-based transistors may enable next-generation low-cost, power-efficient, flexible and transparent electronics. In this work, a high-capacitance AlOx film was developed at a relatively low annealing temperature of ⁓200 °C from its spin-coated precursor solution. | ||
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