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Electron-beam lithography of cinnamate polythiophene films: conductive nanorods for electronic applications

We report the electron-beam induced crosslinking of cinnamate-substituted polythiophene proceeding via excited state [2+2]-cycloaddition. Network formation in thin films is evidenced by infrared spectroscopy and film retention experiments. For the polymer studied herin, the electron-stimulated proce...

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Main Authors: Bojanowski, Maximilian (Author) , Huck, Christian (Author) , Veith, Lisa (Author) , Strunk, Karl-Philipp (Author) , Bäuerle, Rainer (Author) , Melzer, Christian (Author) , Freudenberg, Jan (Author) , Wacker, Irene (Author) , Schröder, Rasmus R. (Author) , Tegeder, Petra (Author) , Bunz, Uwe H. F. (Author)
Format: Article (Journal)
Language:English
Published: 16 Jun 2022
In: Chemical science
Year: 2022, Volume: 13, Issue: 26, Pages: 7880-7885
ISSN:2041-6539
DOI:10.1039/D2SC01867E
Online Access:Verlag, kostenfrei, Volltext: https://doi.org/10.1039/D2SC01867E
Verlag, kostenfrei, Volltext: https://pubs.rsc.org/en/content/articlelanding/2022/sc/d2sc01867e
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Author Notes:N. Maximilian Bojanowski, Christian Huck, Lisa Veith, Karl-Philipp Strunk, Rainer Bäuerle, Christian Melzer, Jan Freudenberg, Irene Wacker, Rasmus R. Schröder, Petra Tegeder and Uwe H.F. Bunz
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Summary:We report the electron-beam induced crosslinking of cinnamate-substituted polythiophene proceeding via excited state [2+2]-cycloaddition. Network formation in thin films is evidenced by infrared spectroscopy and film retention experiments. For the polymer studied herin, the electron-stimulated process appears to be superior to photo (UV)-induced crosslinking as it leads to less degradation. Electron beam lithography (EBL) patterns cinnamate-substituted polythiophene thin films on the nanoscale with a resolution of around 100 nm. As a proof of concept, we fabricated nanoscale organic transistors using doped and cross-linked P3ZT as contact fingers in thin film transistors.
Item Description:Gesehen am 08.12.2022
Physical Description:Online Resource
ISSN:2041-6539
DOI:10.1039/D2SC01867E

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