Visualizing the active paths in morphologically defective organic thin-film transistors
The charge-carrier mobility of organic semiconductors extracted from thin-film transistors is highly dependent on film morphology. Morphological defects can lead to the underestimation of charge transport properties, which may impede the rational design of novel materials. Herein, a novel analytical...
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| Hauptverfasser: | , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
August 25, 2021
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| In: |
Advanced electronic materials
Year: 2021, Jahrgang: 7, Heft: 11, Pages: 1-10 |
| ISSN: | 2199-160X |
| DOI: | 10.1002/aelm.202100400 |
| Online-Zugang: | Verlag, kostenfrei, Volltext: https://doi.org/10.1002/aelm.202100400 Verlag, kostenfrei, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.202100400 |
| Verfasserangaben: | Wen-Shan Zhang, Maik Matthiesen, Benjamin Günther, Jakob Wensorra, Daniel Fischer, Lutz H. Gade, Jana Zaumseil, and Rasmus R. Schröder |
| Zusammenfassung: | The charge-carrier mobility of organic semiconductors extracted from thin-film transistors is highly dependent on film morphology. Morphological defects can lead to the underestimation of charge transport properties, which may impede the rational design of novel materials. Herein, a novel analytical method is presented to functionally characterize entire active layers of solution-processed thin-film transistors. By correlating imaging and spectroscopy of secondary electrons, nano-sized morphological defects are discovered and the effective current paths between source and drain electrodes are directly visualized. After image-processing, the as-measured mobility values of zone-cast thin-films of a tetraazaperopyrene derivative are corrected, obtaining charge-carrier mobilities of up to five times higher than the as-measured values. The direct visualization of the electric functionality of the organic thin-films facilitates a unique quantification of the impact of morphological defects and provides a solid benchmark to estimate the potential for further improvement of device performance. |
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| Beschreibung: | Gesehen am 27.03.2023 |
| Beschreibung: | Online Resource |
| ISSN: | 2199-160X |
| DOI: | 10.1002/aelm.202100400 |