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Low-temperature growth of silicon nanotubes and nanowires on amorphous substrates

Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si s...

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Main Authors: Mbenkum, Beri Nsoyani (Author) , Schneider, Andreas S. (Author) , Schütz, Gisela (Author) , Xu, C. (Author) , Richter, Gunther (Author) , Aken, Peter A. van (Author) , Majer, Günter (Author) , Spatz, Joachim P. (Author)
Format: Article (Journal)
Language:English
Published: 10 March 2010
In: ACS nano
Year: 2010, Volume: 4, Issue: 4, Pages: 1805-1812
ISSN:1936-086X
DOI:10.1021/nn900969y
Online Access:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/nn900969y
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Author Notes:Beri N. Mbenkum, Andreas S. Schneider, Gisela Schütz, C. Xu, Gunther Richter, Peter A. van Aken, Günter Majer, and Joachim P. Spatz
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Summary:Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si substrates. Using hydrogen instead of oxygen plasma during NP preparation enhances the catalytic activity of AuNPs (diameters of 10−20 nm), enabling Si 1D growth at temperatures as low as 320 °C. On BSG, Si nanowires (SiNWs) are identified and reasonable vertical alignment is achieved at 420 °C. On SiOx/Si, only Si nanotubes (SiNTs) are obtained right up to 420 °C. A mixture of SiNTs and SiNWs is observed at 450 °C and only SiNWs grow at 480 °C.
Item Description:Gesehen am 12.04.2023
Physical Description:Online Resource
ISSN:1936-086X
DOI:10.1021/nn900969y

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