Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL detector

Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the techn...

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Main Authors: Aad, Georges (Author) , Ackermann, Anke (Author) , Baltes, Lisa Marie (Author) , Bartels, Falk (Author) , Rio, Fernando del (Author) , Dittmeier, Sebastian (Author) , Dunford, Monica (Author) , Franchino, Silvia (Author) , Junkermann, Thomas (Author) , Klassen, Martin (Author) , Mkrtchyan, Tigran (Author) , Ott, Philipp (Author) , Rassloff, Damir Fabrice (Author) , Rodriguez Bosca, Sergi (Author) , Sauer, Christof (Author) , Schöning, André (Author) , Schultz-Coulon, Hans-Christian (Author) , Sothilingam, Varsiha (Author) , Stamen, Rainer (Author) , Starovoitov, Pavel (Author) , Vigani, Luigi (Author) , Weber, Sebastian (Author) , Wessels, Martin (Author) , Zinßer, Joachim (Author)
Corporate Author: ATLAS Collaboration (Author)
Format: Article (Journal)
Language:English
Published: 4 October 2024
In: Journal of Instrumentation
Year: 2024, Volume: 19, Issue: 10, Pages: 1-39
ISSN:1748-0221
DOI:10.1088/1748-0221/19/10/P10008
Online Access:Resolving-System, kostenfrei, Volltext: https://doi.org/10.1088/1748-0221/19/10/P10008
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Author Notes:the ATLAS collaboration*
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Summary:Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb-1 since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 1014 1 MeV neutron-equivalent cm-2 averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors' response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation environments.
Item Description:*The ATLAS collaboration: G. Aad, A. Ackermann, L.M. Baltes, F. Bartels, F. Del Rio, S.J. Dittmeier, M. Dunford, S. Franchino, T. Junkermann, M. Klassen, T. Mkrtchyan, P.S. Ott, D.F. Rassloff, S. Rodriguez Bosca, C. Sauer, A. Schoening, H.-C. Schultz-Coulon, V. Sothilingam, R. Stamen, P. Starovoitov, L. Vigani, S.M. Weber, M. Wessels, J. Zinsser [und 2891 weitere Personen]
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Physical Description:Online Resource
ISSN:1748-0221
DOI:10.1088/1748-0221/19/10/P10008