Building-block-selective deposition of self-assembled monolayers for enhancing interface polarity in solution-processed thin film transistors
A frequently adopted approach in solution-processed electronics involves device engineering with self-assembled monolayers (SAMs). However, in some cases, such engineering occurs non-specifically, not only affecting the intended building blocks but also other parts of the device, deteriorating its p...
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| Main Authors: | , , , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
09 Oct 2025
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| In: |
Journal of materials chemistry. C, Materials for optical and electronic devices
Year: 2025, Volume: 13, Issue: 46, Pages: 23072-23082 |
| ISSN: | 2050-7534 |
| DOI: | 10.1039/D5TC02062J |
| Online Access: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1039/D5TC02062J Verlag, lizenzpflichtig, Volltext: https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc02062j |
| Author Notes: | Po-Ying Chuang, Bernice Karsten, Michael Zharnikov and Yian Tai |
| Summary: | A frequently adopted approach in solution-processed electronics involves device engineering with self-assembled monolayers (SAMs). However, in some cases, such engineering occurs non-specifically, not only affecting the intended building blocks but also other parts of the device, deteriorating its performance. To this end, we propose and demonstrate a procedure for the selective deposition of functional SAMs onto a glass substrate of top-gate-bottom-contact transistors with indium tin oxide electrodes. The respective SAMs, carrying electron-donating and electron-withdrawing tail groups, were able to positively affect the charge carrier density in the adjacent active layer, with a clear correlation between the character of the groups and semiconductor type, resulting in improved device performance. This approach was demonstrated for both organic and inorganic semiconductors of different types (p-type, n-type, and ambipolar), which underlines its general character and suggests that it can be adapted to other kinds of solution-processed devices. |
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| Item Description: | Gesehen am 30.04.2026 |
| Physical Description: | Online Resource |
| ISSN: | 2050-7534 |
| DOI: | 10.1039/D5TC02062J |