Building-block-selective deposition of self-assembled monolayers for enhancing interface polarity in solution-processed thin film transistors

A frequently adopted approach in solution-processed electronics involves device engineering with self-assembled monolayers (SAMs). However, in some cases, such engineering occurs non-specifically, not only affecting the intended building blocks but also other parts of the device, deteriorating its p...

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Bibliographic Details
Main Authors: Chuang, Po-Ying (Author) , Karsten, Bernice (Author) , Zharnikov, Michael (Author) , Tai, Yian (Author)
Format: Article (Journal)
Language:English
Published: 09 Oct 2025
In: Journal of materials chemistry. C, Materials for optical and electronic devices
Year: 2025, Volume: 13, Issue: 46, Pages: 23072-23082
ISSN:2050-7534
DOI:10.1039/D5TC02062J
Online Access:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1039/D5TC02062J
Verlag, lizenzpflichtig, Volltext: https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc02062j
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Author Notes:Po-Ying Chuang, Bernice Karsten, Michael Zharnikov and Yian Tai
Description
Summary:A frequently adopted approach in solution-processed electronics involves device engineering with self-assembled monolayers (SAMs). However, in some cases, such engineering occurs non-specifically, not only affecting the intended building blocks but also other parts of the device, deteriorating its performance. To this end, we propose and demonstrate a procedure for the selective deposition of functional SAMs onto a glass substrate of top-gate-bottom-contact transistors with indium tin oxide electrodes. The respective SAMs, carrying electron-donating and electron-withdrawing tail groups, were able to positively affect the charge carrier density in the adjacent active layer, with a clear correlation between the character of the groups and semiconductor type, resulting in improved device performance. This approach was demonstrated for both organic and inorganic semiconductors of different types (p-type, n-type, and ambipolar), which underlines its general character and suggests that it can be adapted to other kinds of solution-processed devices.
Item Description:Gesehen am 30.04.2026
Physical Description:Online Resource
ISSN:2050-7534
DOI:10.1039/D5TC02062J